基于键合工艺制备满足射频滤波器应用的压电薄膜材料的研究和产业化进展

Research and industrialization progress of piezoelectric film materials based on bonding technology forRF filter applications

  • 摘要: 传统的SAW制备在LiNbO3(LNO)、LiTiO3(LTO)等体压电材料上。这些体单晶材料的主要问题是成本较高且不与CMOS工艺兼容。近年来, 越来越多的研究者开始致力于开发薄膜SAW器件。本文针对基于键合工艺制备LiNbO3和LiTiO3薄膜材料的研究进展及其产业化进展进行了综合阐述, 为后续研究提供一定的参考。

     

    Abstract: Traditional preparation in LiNbO3 SAW(LNO), LiTiO3(LTO) on the body, such as piezoelectric materials. The main problem of these bulk monocrystallous materials is their high cost and not compatible with CMOS process. In recent years, more and more researchers began to devote themselves to developing thin film SAW devices. In this paper, based on the preparation of LiNbO3 and LiTiO3 thin film materials bonding process makes a comprehensive review research progress and industrialization progress, provide certain reference for subsequent research.

     

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