射频溅射法制备掺Ce3+荧光薄膜上转换发光研究

Up-conversion Luminescence of Ce3+ Doped Thin Film Prepared by RF Magnetron Sputtering

  • 摘要: 本文以自制掺Ce3+钇铝石榴石(YAG)荧光粉为原料经烧结得到陶瓷靶材,利用射频溅射法在石英基片上制备薄膜,氩气工作气压为3Pa,随后在氮气气氛下1100℃/3h退火处理得到Ce3+:YAG荧光薄膜。研究了在980nm红外激光照射下Ce3+掺杂YAG薄膜的上转换发光现象。实验结果表明在红外激光泵浦下,薄膜发出的荧光来自于Ce3+离子的5d-4f跃迁。荧光强度与泵浦光功率之间的线性关系表明了Ce3+:YAG薄膜的上转换发光由双光子吸收过程所主导。

     

    Abstract: Ce3+:YAG phosphor thin films were deposited on quartz glass at room temperature by RF(Radio Frequency) magnetron sputtering technique in the pure argon atmosphere(3Pa) from Ce3+:YAG phosphor powder target.Subsequently annealed at 1100℃ for 3h in the nitrogen atmosphere.Visible upconversion luminescence was demonstrated in trivalent cerium doped YAG thin film(Ce3+:YAG) under focused infrared laser irradiation at 980 nm.The fluorescence spectra shows that the up-converted luminescences come from the 5d-4f transitions of the electrons in trivalent cerium ions.The linear relationship of luminescence intensity of trivalent cerium on infrared pumping power reveals that the conversions of infrared radiation are dominated by two-photon absorption process.

     

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