Abstract: The electric properties of a heterojunction field effect transistor（FET） with embedded InAs quantum dots（QDs） have been studied at room and lower temperature,and the output characteristics under the influence of QDs were acquired.The QDs can act as nano-floating-gates and affect the two -dimensional electron gas（2DEG） nearby room temperature,which was demonstrated by the Ⅰ-Ⅴ characteristics under near-infrared light illumination and QDs charged conditions.A distinct negative differential conductance（NDC） was observed at low temperature.This behavior is explained by the resonant tunneling between the 2DEG and QDs.The results imply a new method to operate conventional FET with embedded QDs or QDs based electron memory.