铜互连清洗工艺中铜腐蚀问题的研究

Research on copper corrosion in copper interconnection cleaning process

  • 摘要: 本文概述了集成电路铜互连清洗工艺中常见的铜腐蚀缺陷的基本常识, 介绍了大马士革工艺湿法清洗导致铜互连腐蚀的形成过程。AIO孔洞下方的铜金属被腐蚀, 导致电路连接断路无法正常作业, 造成良率损失。本文设计实验研究了铜腐蚀现象, 结合版图设计特点对缺陷进行分析, 提出了相应的改善方法。本文同时还指出了湿法清洗机台ESD部件对铜腐蚀缺陷的产生有重要影响, 针对机台ESD设计缺陷我们与厂商合作设计和改进了机台ESD能力, 并成功的应用于实际生产中。

     

    Abstract: In this paper the basic knowledge of copper corrosion defects in IC BEOL copper interconnect process were summarized, and the formation process of copper corrosion in post Dual-Damascus structure all in one(AIO) etch clean process was introduced. The copper under the AIO cavity is corroded, which leads to the short circuit and the failure of circuit connection, resulting in yield loss. Based on the key influence factors of AIO cleaning process, the copper corrosion phenomenon is studied by experiments, and the defects are analyzed according to the characteristics of the layout design. This paper also points out that ESD components in wet cleaning machine have an important impact on copper corrosion defects. In view of insufficient ESD design, we cooperated with vendor to design and improve the ability of electrostatic removal, which are applied to production successfully.

     

/

返回文章
返回