Abstract: HfO₂ films were grown on p-Si（100） substrates by radio frequency magnetron sputtering using oxygen and argon mixture as sputtering gas.The ratio of oxygen to argon is 0.2.The substrate temperatures are room temperature,100℃,200 ℃,250 ℃,300 ℃,350 ℃ and 400 ℃,respectively.Influences of substrate temperature and deposition rate on microstructures of the films are investigated by Scanning electron microscope,X-ray diffraction and Atomic force microscope.The results show that deposition rate decreases with the increase of substrate temperature.The HfO₂ film appears（111） monoclinic orientation when the substrate temperature increases to 100℃.With the substrate temperature increasing,the preferred orientation of（111） becomes more obvious,the grain size increases and the surface roughness decreases.