张应变GaAs层引入使InAsInP量子点有序化排列的机理研究

Study on the mechanism of ordering growth InAs/InP quantum dots by introducing tensile strained GaAs layer

摘要: 采用LP-MOVPE技术, 在 (001)InP衬底上生长的InAs/InP自组装量子点是无序的。为了解决这个问题, 在InP衬底上先生长张应变的GaAs层, 然后再生长InAs层, 可得到有序化排列的量子点。本文对张应变GaAs层引入使量子点有序化排列的机理进行了分析。为生长有序化、高密度、均匀性好自组装量子点提供了依据。

Abstract: In the paper we analyze the mechanism of ordering growth InAs/InP quantum dots (islands) on undulational surface and point out that the tensile strain layer controls the arrangement of InAs/InP self-assembled quantum dots. Ordering InAs quantum dot on tensile strained GaAs layer on InP substrate is achieved.