Abstract:
The key problem encountered in YBCO thin film growth by sputtering is the negative ions bombarding the growing films.To minimize the negative ions bombardment effect,YBCO thin film growth was experimented by afterglow plasma process.Single crystal YBCO thin films with excellent superconducting transition properties were prepared by afterglow plasma sputtering.The current density of the films at 77 K is 7.6×10
6 A/cm
2for 1 μV.The microwave surface resistance of the films at (77 K,10 GHz) is 206 μΩ.The full width at half maximum (FWHM) value of the rocking curve around (005) diffraction peak,which is 0.12
o,is obtained.