Abstract: Doping of silicon nanowire is one of effective meansto manufacture silicon nanowiresemi-conductor devices.The recent development of doped silicon nanowire was introduced.The kinds of silicon nanowire including boron,phosphorus and lithium doped silicon nanowire, the measurement of properties including photolumin escence characteristics,electrical transport characteristics,field mission characteristics and near edge X-ray absorption finestructurespectroscopy measurement,the recent application research development including single-electron detector and counter,memory cell and nanowire sensor etc.weredemonstrated respectively.At last, the promising prospect of doped silicon nanowire was discussed.