ZnTe：Cu多晶薄膜结构和电性质(英文)

Structure and electrical properties of ZnTe:Cu polycrystalline thin films

摘要: 用共蒸发法在室温下制备了ZnTe:Cu多晶薄膜,利用XRD、AFM和XPS等测试技术对样品进行了表征,研究了掺Cu浓度和退火温度对薄膜物相和晶粒度的影响,分析了薄膜表面的元素状态。根据铜离子的变价行为对异常的电阻率温度关系作了解释。并确定了最佳掺铜浓度和退火温度。

Abstract: ZnTe:Cu polycrystalline thin films prepared by vacuum co-evaporation technique were characterized by X-ray Diffraction（XRD）,Atomic Force Microscope（AFM）and X-ray Photoelectron Spectroscope（XPS）measurements.The impact of copper-doping concentration and annealing temperature upon structure and surface morphology of ZnTe:Cu thin films were studied and elements existent states were analyzed.The abnormalρ～T curve was explained based on changes of copper ions valence. And the optimum copper-doped concentration and annealing temperature were determined.