全耗尽SOIMOSFET阈值电压解析模型

Analytical threshold voltage model for fully depleted SOI MOSFETs

    摘要
  • 摘要: 提出了一种简化的全耗尽SOIMOSFET阈值电压解析模型。该模型物理意义明确,形式简单,不需要非常复杂的计算。通过在不同条件下将本文的模拟结果和MED ICI模拟结果进行对比,验证了本模型的精确性。因此本模型对于器件物理特性的研究和工艺设计有很好的指导意义。

     

    Abstract: A simplified threshold voltage model of fully depleted SOI MOSFET is proposed.This model has an evidently physical meaning and simple form.It doesn’t need complex computation.This model is proved to be accurate by comparing with MEDICI simulation under different conditions.This model has significant meaning for research on device characteristics and process design.

     

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