RIE对巨磁电阻自旋阀磁性能的影响

Influence of reactive ion etching process on magnetic properties of giant magnetoresistive spin valve

摘要: 对巨磁电阻自旋阀磁场传感器制作中的关键技术之一:自旋阀薄膜的反应离子刻蚀(RIE)工艺,进行了试验研究。自旋阀结构为:Ta(3.5nm)/Cu(0.7nm)/NiFe(4.5nm)/CoFe(1nm)/Cu(3nm)/CoFe(2nm)/Ru(0.7nm)/CoFe(2nm)/MnIr(8nm)/Ta(4nm),刻蚀气体为氢氯碳氟化合物(HCFC:Hydro-chloro-fluoro-carbon),气体流量为10.5sccm,RF功率为180 W,时间为27min。结果表明:RIE技术可以加工出理想的巨磁电阻自旋阀薄膜图形,且加工过程对自旋阀的磁性能影响不大,这些结果对于巨磁电阻自旋阀型集成磁传感器的批量制作具有积极意义。

Abstract: Reactive ion etching （RIE） process utilized to form giant magnetoresistive （GMR） spin valve sensing elements was investigated experimentally. The spin valve has a structure of Ta（3.5nm）/Cu（0.7nm）/NiFe（4.5nm）/CoFe（1nm）/Cu（3nm）/CoFe（2nm）/Ru（0.7nm）/CoFe（2nm）/MnIr（8nm）/Ta（4nm）. Using Hydrochlorofluorocarbon （HCFC） gas at a flow speed of 10.5 sccm, the good patternsare obtained at RF power of 180 W for 27 min, and the magnetic properties of spin valve are changedonly minutely during RIE process. The results should be positive for manufacture of integrated magnetic sensors based on GMR effect.