1.08μm InAs/GaAs量子点激光器光学特性研究

Optical characteristics of 1.08μm InAs/GaAs quantum-dot laser diodes

摘要: 介绍了InAs/GaAs量子点激光器的材料生长,器件制备及其光学特性的研究。器件为条宽100μm,腔长1600μm未镀膜激器。室温阈值电流密度为221A/cm²,激射波长为1.08μm,连续波工作最大光功率输出为2.74W(双面),外微分效率为88％,经50℃,1000h老化,仍有>1.2W的光功率输出。

Abstract: Optical characteristics of laser diodes fabricated from five InAs quantum-dot layers grown by MBE technique is described. The devices exhibited a peak power of 2.74W (both faces) at 1.08 μm with threshold current density of J_th=221A/cm² and external differential quantum efficiency of η_D=88% during room-temperature continuous-wave lasing. The life measurements indicate that the device remain output power >1.2W after stably operating over 1000 h at 50℃.