GMR硬磁偏置层加工技术

Processing technology for magnetic bias film of GMR

  • 摘要: 磁控溅射是一种能够在低温条件下生长大面积优质薄膜的工艺,广泛用在磁传感器和存储等领域。本文研究了在巨磁电阻(Giant Magneto Resistance:GMR)多层膜周围溅射接触紧密的CoCrPt硬磁膜的工艺,使得硬磁膜能为GMR提供磁场偏置,以解决小尺度GMR的噪声问题。研究中采用了1:5的BHF溶液的湿法刻蚀工艺,刻蚀速率为25 Å/s,实现了刻蚀深度的精确控制,解决了薄膜对准的问题。同时改进了CoCrPt薄膜溅射的种子层,使得CoCrPt能在常温下溅射得到很好的晶体结构。这种工艺为基于GMR的小尺寸器件设计提供了可能性。

     

    Abstract: Magnetron sputtering is a semiconductor processing technology which sputters large area and high quality films such as GMR which is widely used in magnetic sensor and magnetic storage.As GMR element in small size has Barkhausen noise problem,a CoCrPt hard magnetic film is sputtered right next to the GMR element to provide magnetic bias and largely reduce the noise.A wet etching with 1:5 BHF solution is used to align the two films.The etching rate is 25 Å/s.A new structure of the seed layer for CoCrPt is used which makes it possible to sputter this film at room temperature.All the processes enhance application scope of micro-devices base on GMR.

     

/

返回文章
返回