Abstract:
Ferroelectric thin films Bi
3.15Nd
0. 85Ti
3-xZrxO
12 of B-site Zr substitution of Bi
4Ti
3O
12 were fabricated by sol-gel method in the paper. Test and analysis of B-site Zr substituted BNT thin films( BNTZx) were done. The results show that residual polarization of BNTZ by Zr Substitution increased with the content of Zr
4+ increasing first,it was the maximum when Zr
4+ is 6%,then it was decreased with the content of Zr
4+ increasing. But coercive voltage Vc has not nearly changed. Anti fatigue performance Of ferroelectric thin films Bi
3.15Nd
0. 85Ti
3-xZrxO
12 of B-site Zr substitution got the worst result than Bi
4Ti
3O
12 Thin Film.