掺杂Zr对Bi4Ti3O12铁电薄膜性能的影响

Influence of Zr Substitution of Bi4Ti3O12 Thin Film to Ferroelectric Properties

  • 摘要: 本文采用x射线衍射法对溶胶-凝胶法备制B位掺杂Zr的铁电薄膜Bi3.15Nd0.85Ti3-xZrxO12。对所制备的薄膜进行XRD测试、疲劳分析及铁电性能分析。结果表明:对BNT进行B位Zr4+掺杂后,随着掺量的增加,BNTZ薄膜的剩余极化值逐渐增加,当x=6%时达到最大,随后随着Zr掺量的继续增加,剩余极化值开始减小,而矫顽电压Vc值几乎没有什么变化;掺杂了Zr薄膜的疲劳特性均比未掺杂的BNT薄膜的要差一些。

     

    Abstract: Ferroelectric thin films Bi3.15Nd0. 85Ti3-xZrxO12 of B-site Zr substitution of Bi4Ti3O12 were fabricated by sol-gel method in the paper. Test and analysis of B-site Zr substituted BNT thin films( BNTZx) were done. The results show that residual polarization of BNTZ by Zr Substitution increased with the content of Zr4+ increasing first,it was the maximum when Zr4+ is 6%,then it was decreased with the content of Zr4+ increasing. But coercive voltage Vc has not nearly changed. Anti fatigue performance Of ferroelectric thin films Bi3.15Nd0. 85Ti3-xZrxO12 of B-site Zr substitution got the worst result than Bi4Ti3O12 Thin Film.

     

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