2.5～10Gb/s HEMT IC全耗尽型光驱动电路中器件性能的研究

Study of device performance for 2.5～10Gb/s HEMT modulator driver IC

    摘要
  • 摘要: 主要针对高速光纤通信系统中调制器驱动电路HEMTIC设计开展研究。着重讨论了PHEMT器件阈值电压、特征频率对外调制驱动电路特性的影响，给出了满足电路性能要求的器件参数范围；对2.5～10Gb/s PHEMT IC光驱动电路进行了计算机仿真，眼图模拟结果表明满足2.5～10Gb/s高速光纤通信系统需要。

     

    Abstract: This paper focuses on the research of device performance for 2.5~10Gb/s HEMT modulator driver IC. The effect of device threshold voltage and current gain cutoff frequency to driver IC is discussed, and the range of the above parameter range to meet driver IC requirement is calculated. Eye diagrams simulation is made for 2.5~10Gb/s HEMT modulator driver IC by using PSPICE.

     

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