离子注入技术与硅基发光材料

ION IMPLANTATION TECHNOLOGY AND SILICON BASED LIGHT EMITTING MATERIALS

  • 摘要: 硅基发光材料是未来光电子集成的基础材料。离子注入技术在硅基发光材料的研究与开发中有极重要的作用。多孔硅的发现是硅基发光材料的一项重大进展。继多孔硅之后,相继出现了多孔SiC蓝光材料,Si+注入SiO2蓝光材料和Ge+注入SiO2紫光材料,使硅基发光材料的研究进入了一个欣欣向荣的新阶段。

     

    Abstract: Silicon based light emitting materials are the elemental materials for the future optoelectronic integration. Ion implantation plays a very important role in the research and exploration of silicon based light emitting materials. The discovery of porous silicon is a great progress in silicon based ligh emitting material. Following porous silicon, blue emitting porous SiC, blue emitting Si+ implanted SiO2 and violet emitting Ge+ implanted SiO2 are subsequently fabricated, which improved the research of silicon based light emitting materials into a new thriving stage.

     

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