低温化学气相沉积法制备SiC纳米粉体

Preparation of nanosized silicon carbide powders by chemical vapor deposition at low temperature

摘要: 合成了液态碳硅烷并对其结构进行了分析;采用化学气相沉积工艺,以自制的液态碳硅烷为先驱体,分别在850℃和900℃的较低温度下制得了SiC粉体,并对产物进行了IR、XRD和SEM分析。结果表明,850℃产物中含有未分解完全的有机基团,900℃产物为较纯的部分结晶的纳米SiC粉体,粒度为50～70nm。

Abstract: Liquid carbosilane was synthesized and analyzed by IR and H-NMR.SiC powders were prepared by CVD at 850℃ and 900℃ from liquid carbosilanes.The product powders were characterized by IR,XRD and SEM.The result shows that the liquid carbosilane synthesized is a mixture of several oligomers which had Si-C backbone.The powders prepared at 850℃ contain some organic segments,and those prepared at 900 ℃ are pure nanosized SiC powders,which are partly crystallized.The size of them is about 50~70nm.