Abstract: The La_0.67Sr_0.33MnO₃（LSMO） thin film was grown by pulsed laser deposition on SnO₂: F（FTO） substrates.Resistive switching characteristics of Au/ LSMO/FTO sandwich structure were tested by direct current voltage at room temperature.The results show the bipolar reversible resistive switching was observed.Analysis of I-V behaviors is carried out,and it is suggested that the resistive switching characteristics are governed by the Schottky conduction mechanism and space-charge-limited-current conduction in high resistive state.The switching process between high resistive state and low resistive state is explained in terms of space-charge-limited-current conduction in higher voltage region caused by asymmetric electron trapping centers.