Abstract: Mo/Si bilayer thin films were prepared by sputtering Mo onto amorphous Si film grown on Si substrates.For different sputtering energies of Mo atoms,surface morphology and crystal phases of Mo/Si film were studied by AFM and XRD.As sputtering energy of Mo atoms increasing,surface roughness of Mo/Si film is increasing,characteristic diffraction peaks of Mo and Si species beome stronger and stronger,furthermore,the peak of MoSi₂ which may be formed between Mo layer and Si layer appears.Sputtering energy of Mo atoms is attributed to be the main cause for crystallization of amorphous Si and formation of MoSi₂.