Abstract: Mn⁺irons were implanted into n-type Ge （111） single crystal at room temperature by ion implantation method with energy of 100keV and a dose of 3×10¹⁶ cm^-2. Subsequently annealing was per-formed at 400°C. Structural and morphological properties of samples were analyzed by X-ray diffraction measurements （XRD） and Atomic force microscopy （AFM）. Compositional properties were studied byAuger electron spectroscopy （AES）. Magnetic properties were investigated by Alternating gradient mag-netometer （AGM） at room temperature. Results show that as-implanted sample is amorphous and after annealing the crystal structure of Ge is restored. There are no new phases found. Manganese ions aredeeply implanted into germanium substrate and the highest manganese atomic concentration is 8%at the depth of 120nm. The annealed sample shows ferromagnetic behavior at room temperature.