单晶硅掺杂类型对化学镀Ni-P膜的影响

Influence of dopant type in single crystal Si on the electroless plated Ni-P films

摘要: 本文采用化学镀的方法分别在P型、N型Si(100)表面制备了Ni-P膜,通过扫描电镜(SEM)及电子能谱仪(EDS)分析考察了同种制备条件下,在不同基底上镀膜的表面形貌和不同基底对镀层组分的影响;并用原子力显微镜(AFM)对不同基底上镀膜的平整度进行了研究。结果发现两种基底上的镀膜形貌、元素含量及镀膜平整度明显不同,以P型Si(100)作为基底时,膜层颗粒度及平整度较好。

Abstract: The Ni-P Films are electrolessly deposited respectively on n-Si（100） and p-Si（100）.On the same preparation condition,the surface images and compositions of films on different substrate are analyzed by SEM and energy spectrometer,and flatness of films is studied by AFM.And The results show that the surface images,flatness and compositions of films are apparently dense as p-Si substrate and n-Si substrate,the quality of films on p-Si substrate is preferable.