激光能量对碲镉汞注入样品退火效果的影响

Effect of laser energy on annealing of ion implanted HgCdTe

  • 摘要: 利用脉冲YAG激光器对砷注入长波碲镉汞样品进行激光退火, 分析不同能量密度的激光光束退火所引起的样品表面电学性质的变化。实验表明, 激光能量密度越大, 激光退火的效果越明显。我们认为要达到理想退火效果, 样品表面一薄层需处于近熔化状态, 以得到晶格结构的重新组织。

     

    Abstract: Ar+ implanted HgCdTe samples with long cutoff wavelength were annealed using pulsed YAG laser irradiation (pulse duration was 10ns, wavelength was 1.06μm). Experiments for analysis the changes of electricity properties of the samples that had been annealed with different energy density, show that the bigger the energy density is, the more anneal effect could be gotten.

     

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