Abstract: The third-generation wide bandgap semiconductor materials represented by AlGaN is the key material for the preparation of optoelectronic devices such as ultraviolet detectors,and it has become domestic and foreign research hotspots in recent years.However,due to the lack of homoepitaxial substrates,the crystal quality of AlGaN material obtained by heteroepitaxy is generally poor,and the AlGaN doping in AlGaN of high Al composition is difficult,which seriously limits the performance of the UV detectors.Therefore,the key to the preparation of high-performance AlGaN-based solar-blind UV detectors is to grow high-quality AlGaN materials.In this paper,the key technologies for the epitaxial growth of AlGaN-based solar-blind UV detectors and their research progress at home and abroad are reviewed.