PT/P(VDF-TrFE)/多孔氧化硅衬底热释电传感器研制

STUDY OF PT/P (VDF-TrFE) PYROELECTRIC SENSOR BASED ON POROUS SiO2 SUBSTRATE

  • 摘要: 用电化学方法制备多孔化率约69%的多孔硅,在湿氧中氧化成多孔氧化硅,作热释电传感器的衬底。将用溶胶-凝胶法制备的钛酸铅(PT)纳米粉粒掺入聚偏氟乙烯/三氟乙烯共聚物中形成PT/P(VDF-TrFE)热释电复合敏感膜。PT粉粒的掺入体积比为0.12时,与成膜条件相同的P(VDF-TrFE)膜相比,热释电优值提高20%,探测优值提高35%。多孔氧化硅结构降低了衬底的热导率和元件热容,使多孔硅衬底传感器的电流灵敏度比结构相同的体硅衬底传感器样品高约2倍。

     

    Abstract: A single pyroelectric sensor with composite sensing film based on porous silicon dioxide was fabricated. The sensing film consists of nanometer-sized particles with lead titanate (PT) embedded in a vinylidene-trifluoroethylene P (VDF-TrFE) copolymer. The substrate was obtained by wet oxidation of porous silicon formed by electrochemical method. The results show that, the figure of merit of PT/P (VDF-TrFE) composite with PT volume fraction of 0.12 is 20% higher for pyroelectricity and 34% higher for detectivity than the pure P (VDF-TrFE) film under the same conditions. The current sensitivity of PT/P (VDF-TrFE) sensor based on porous silicon dioxide substrate is about 2 times higher than that of the sensor with the same structure but based on a bulk silicon substrate.

     

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