Abstract: Ⅲ-Ⅴ compound materials such as GaAs, InP and GaN have wider band gap and electron mobility than silicon, which can meet the new requirements of modern electronic technology for high temperature, high frequency, and high power. Ⅲ-Ⅴ compound materials are becoming the development frontier in the fields of communication technology and automobile electronics. With the rapid development of 5 G, new energy vehicles, solar energy, and energy-saving(fast charging) technologies, the market for Ⅲ-Ⅴ compound materials will continuously grow. The development trend of GaAs, InP and GaN device technology and industry in the application of radio frequency, optoelectronics and power devices are optimistic.