MOCVD方法在Si衬底上低温生长ZnO薄膜

Low-temperature preparation of ZnO films on Si substrates by MOCVD

  • 摘要: 采用二乙基锌(DEZn)和氧化亚氮(N2O)作为锌源和氧源,在低温300℃,利用金属有机化学气相沉积(MOCVD)的方法在Si(100)衬底上制备了ZnO薄膜。通过优化氧锌比,ZnO薄膜为高度单一c轴方向生长。由光致发光谱和反射谱得知,ZnO薄膜的紫外发光峰位于388nm,具有很好的光透性,且其PL谱半峰宽为80meV。

     

    Abstract: ZnO films were deposited on Si(100) substrates at 300℃ by metal-organic chemical vapor deposition(MOCVD).The effect of different ratios of DEZn to N2O on crystal quality was analyzed.It is found that the optimum ratio of DEZn to N2O is 2:1.And in this optimum growth condition,X-ray diffraction(XRD) and scanning probe morphology(SPM) images indicate that the films grow along the c-axis orientation.ZnO film exhibits a strong UV optical absorption near 388 nm.And the optical absorbance is close to zero,that indicates nearly 100% optical transparence.Photoluminescence(PL) spectrum shows only strong near-band-edge emissions with little or no deep-level emission related to defects.The full-width at half-maximum(FWHM) of the ultraviolet emission peak is 80meV.The results indicate that better crystal quality can be obtained.

     

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