Abstract: By magnetron sputtering method using indium oxide target（In₂O₃:SnO₂=90:10,wt%）,highly transparent and conductive ITO films could be successfully deposited on glass substrate at room temperature.The effect of pAr on the film structure and properties was discussed in detail.The films deposited at lower pAr have more excellent body-centered cubic polycrystalline and more excellent electrical properties.And at pAr = 0.3 Pa,the maximal transmittance of ITO film is 92.9% for the visible light spectrum,and its conductance is 8.9×10^-4Ωocm.