叠加能量C+注入SiO2薄膜的光致发光特性

PHOTOLUMINESCENCE PROPERTIES OF MULTIPLE-ENERGY C+ IMPLANTED SiO2 FILMS

    摘要
  • 摘要: 首次采用叠加能量离子注入技术制备C+注入SiO2薄膜样品，室温下观测到很强的蓝光发射。通过测量样品的光致发光（PL）谱对退火条件的依赖关系，研究了样品的发光特性。对发光机制进行了初步探讨。

     

    Abstract: C+ implanted SiO2 film samples fabricated by multiple-energy implantation technique were reported for the first time. Strong blue emission from the samples were measured at room temperature. The photoluminescence （PL） of the samples were studied via the relationship between the annealing conditions and the PL spectra. The mechanism of the PL was discussed.

     

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