基于SCR的SOI ESD保护器件研究

SCR based ESD protection in SOI technologies

摘要: 本文具体分析了体硅SCR(晶闸管)和SOI SCR的抗静电特性,利用软件Sentaurus对埋氧层3μm,顶层硅1.5μm的SOI衬底上的SCR进行了工艺和性能仿真,仿真结果达到了4.5kV的抗静电能力,符合目前人体模型的标准2KV。研究发现,注入剂量(9*13-8*14cm-2)增加会引起触发电压减小,维持电压升高;Trench长度(0.8-1.1μm)增加,器件触发电压几乎不变,维持电压降低;场氧化层长度(2-4.5μm)增加,触发电压和维持电压均增加。

Abstract: The protection mechanism of ESD protection device in SOI technologies is studied in the paper,and the difference of bulk silicon SCR and SOI SCR is analysed.SCR is simulated with Sentaurus that is 2D device simulation soft-ware,the result of simulation attach 2KV of industrial standard of Hunman Body Model.The result of simulation is based on SOI wafer that top silicon is 1.5μm and buried oxide is 3μm.The influence of inject dose,the length of field oxide and Trench depth on the ability of device protection.trigger voltage will decrease and maintain voltage will rise with inject dose increases（9*13-8*14cm-2）,the depth of Trench rieses（0.8-1.1μm）,cause maintain voltage decreases,finally,the length of field oxide increases（2-4.5μm）will cause trigger voltage and maintain voltage rises.