Abstract: The Id-Vd characteristics and temperature distributions of active area of the SOI and SOAN devices are simulated and analyzed over a range of 300K to 600K,and a conclusion that SOAN device is much more suitable for high temperature application is drawn;some optimization of structural and processing parameters of SOAN device are carried out in allusion to high temperature application circumstance,and their optimized values are gained.A CMOS inverter consisted of optimized NMOS and PMOS is put up,and its transient characteristic is simulated.The simulated figure demonstrates that the gate propagation delay of SOAN CMOS is 19ps and 25.5ps,when the ambient temperature is 300K and 500K;the delay of its SOI counterpart is 28.5ps and 35.5ps at the two temperature points respectively.