Abstract: Phase change memory（PCM） becomes very hot in Non volatile memory（NVM） under 65nm process due to its special storage mode.However,several bottle nets like power,thermal stability and cycling ability restrict the development of PCM Thus,in this paper,a novel phase change memory based on alloy Ga₃Sb₈Te₁ was designed,then FEA transient thermal,crystalline kinetics analysis and SPICE macro model of embedded PCM based on Ga₃Sb₈Te₁ material was established.Through FEA transient thermal simulation and crystalline kinetics analysis result,new phase change alloy Ga₃Sb₈Te₁ was proved to have lower reset power,higher thermal stability and cycling ability as well as faster set frequency.