工艺条件对蓝宝石化学机械抛光的影响

Process conditions affected chemical mechanical polishing (CMP) on sapphire

  • 摘要: 系统研究了抛光液的pH值、抛光压力和相对转速等因素对蓝宝石抛光速率和表面粗糙度的影响,研究结果表明:随pH值(9-12)的升高,抛光速率增加,表面粗糙度先降低后升高;随抛光压力和相对转速的增加,抛光速率先增加后降低,表面粗糙度先降低后升高。研究分析认为:pH值因影响在蓝宝石表面形成的水化层从而影响抛光速率和粗糙度;与抛光压力和相对转速相关的Hersey系数对抛光效果影响很大,当Hersey系数为24时,蓝宝石的抛光速率和表面平整度均达到最佳。

     

    Abstract: This paper studied the pH value of slurry,polishing pressure,rotation speed and other factors on the effect of sapphire polishing rate and surface roughness.The impact of research results showed that: with the pH(9-12)increase,polishing rate increased,surface roughness after CMP increased after the first drop;with the increase of the polishing pressure and rotation speed,polishing rate increased too after the first drop,the surface roughness was as the same.The reason was that;Hydration layer which was formed on the sapphire surface affected the polishing rate and surface roughness;Heresy number which was defined by the polishing pressure and rotation speed was influence on the process of polishing.When Hersey number reached 24,sapphire polishing rate reached maximum and surface roughness were better.

     

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