Abstract: VDMOS（Vertically Double Diffused Metal Oxide Semiconductor）Technology for power devices was constrained by the Silicon Limit.It is now improved to have linear relation between On Resistance（Ron） and Breakdown voltage（BV） instead of the quadratic relation by super junction VDMOS.The body junction is modified with the addition of a high energy implantation that forms super junction VDMOS.We use ISE-TCAD simulator to simulate the Ron and BV of the super junction VDMOS.The results show a maximum 40 % increase in BV and obvious reduction in Ron.The approach with a high energy implantation provides a simple means to reduce the on resistance of the VDMOS.