Abstract: By r.f.magnetron sputtering technique,SiO₂ films containing nc-Ge were deposited on p-type Si substrates using a Ge-SiO₂ composite target with Ge wafer on the SiO₂ target.And then,they were annealed in a N₂ ambience at different temperature for 30 min.The microstructure was tested by XRD,XPS,FTIR.The PL properties at room temperature were shown in details.From observation,it is suggested that the origin of the violet light emission is related to the defects of GeO,and that of the yellow one is correlated to the luminescent centers between nc-Ge and matrix SiO₂.