Abstract: FeS₂ thin films were deposited on porous surface of TiO₂ on ITO conducting glass by solution dipping method.FeS₂/TiO₂ composite thin films were obtained by annealing under sulfur atmosphere and by making use of Fe₂O₃ powder to protect uncovered ITO conducting film.Thickness of FeS₂/TiO₂ composite thin films,resistance of ITO conducting glass and photoelectric performance of FeS₂/TiO₂ composite thin films prepared with Different conditions were investigated by XRD,B531/H digital thickness mater,four point resistance probes and XJCM-8.The results indicate that FeS₂/TiO₂ composite thin films with excellent photoelectric performance can be obtained by this method;resistance of ITO conducting film changes little.Therefore,this kind of film is suitable for preparing dye-sensitized solar cells（DSSC）