InP/InGaAs HBT湿法化学选择腐蚀技术

Wet chemical selective etching of InP/InGaAs HBT

    摘要
  • 摘要: 用H3PO4：H2O2系和HCl系腐蚀液实现了InP对InGaAs、InGaAs对InP的湿法化学选择腐蚀，并将其应用于InP/InGaAs HBT制作，发射极面积为10μm×20μm的单管共发射极直流增益β为70，截止频率Ft和最大振荡频率Fmax分别为11GHz和12GHz.

     

    Abstract: InP selective etching to InGaAs and InGaAs selective etching to InP were achieved with H3PO4/H2O2 solution and HCl solution system. Using these process, for 10μm× 20μm emmiter area InP/InGaAs HBT with DC gain of 70, Ft of 11GHz and Fmax of 12GHz are obtained.

     

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