铁诱导低温SiC薄膜的合成

Fe induced SiC films synthesis at low temperature

  • 摘要: 采用热丝化学气相沉积法,以铁作为催化剂,在较低的衬底温度合成纳米SiC薄膜。铁粒子是在400Pa氢气的气氛中,通过用脉冲激光烧蚀铁靶5min引入的。用扫描电镜和拉曼谱对样品进行了分析。扫描电镜观察到了直径为10-30nm,长度短于1μm的无序SiC棒。拉曼谱中的横向生子模式的红移表明生长方向的限制效应。所有这些说明Fe粒子的大小将影响到SiC棒的生长。

     

    Abstract: SiC films were synthesized using hot filament chemical vapor deposition with Fe as catalyst at low substrate temperature. Fe particles were introduced via Fe bulk ablated by pulse-laser deposi-tion in hydrogen ambience of 400Pa. SiC films were characterized by scan electrical morphology(SEM)and Raman spectra. SEM Results show that these SiC nanorods are 10-30nm in diameter and less than 0.5μm in length random aligned in the film. The red shift of the TO phonon mode of the SiC in the Raman spectra indicate the size confinement effect in the growth directi on. All these reveal that the size of the Fe particles affects the growth of nanorods.

     

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