Abstract: TaN thin films were deposited on Al₂O₃ substrates by dc reactive magnetron sputtering. The influences of nitrogen partial flux（N₂/（N₂+Ar））on the micro-structures and the properties of the samples were investigated in detail. The results show that the nitrogen content, resistivity, sheet resistance and the absolute TCR of the TaN films are increased gradually with the increase of the nitrogen partial flux. However, the deposition rate of the sample is decreased with the increase of the nitrogen partial flux. At lower nitrogen partial flux （2%~4%）, the main crystalline phase existing in the TaN films is Ta₂N （hcp） which possesses lower resistivity and absolute TCR. The resistivity of the samples is about in the range from 344μΩ·cm to 412μΩ·cm, and the absolute TCR of the samples is about tens ppm/℃. However, at higher nitrogen partial flux （5%~6%）, the main crystalline phases existing in the TaN films are TaN （bct） and Ta₃N₅（bct）, which possesses higher resistivity and absolute TCR. The resistivity of the samples ranges between 940μΩ·cm and 1030μΩ·cm, and the absolute TCR of the samples is about hundreds ppm/℃.