基于TNT敏感聚合物的纳米阵列结构的制备与性质
Farication and property of nanowire array structure base on TNT sensitive polymer
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摘要: 利用多孔氧化铝模板法制备了两种1,3,5-trinitrotoluene(TNT)敏感的荧光共轭聚合物Tri-phenylamine-co-para-biphenyene vinylene(TPA-PBPV)和Triphenylamine-co-para-phenyl-ene vinylene(TPA-PPV)的纳米线阵列结构。纳米线的直径在80~100nm之间,高度在150-200nm之间。和固体薄膜相比,TPA-PBPV和TPA-PPV荧光光谱都发生了蓝移,TPA-PBPV的发射峰从485变为455nm,PPV的峰从495nm变为475nm。蓝移的发光表明聚合物纳米线阵列可以抑制低能量陷阱,有望提高材料的传感性能。Abstract: fluorescent conjugated polymer nanowire array was fabricated based on two 1,3,5-trinitrotoluene(TNT)sensitive polymers——Triphenylamine-co-para-biphenyene vinylene(TPA-PBPV)and Triphenylamine-co-para-phenylene vinylene(TPA-PPV)with porous anodic aluminum(PAA)template.Compared with that of spin-coated film,the emission maxima of both TPA-PBPV and TPA-PPV were blueshifted from 485 to 455 nm and from 495 to 475 nm respectively.The blueshifted emission suggests the polymer nanowire array is effective for preventing the energy trap.Therefore,it is a promising technique for further enhancing the TNT sensory performance.
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