Abstract: The paper shows a research of adopting MEMS to manufacture c-type silicon cup on p-type ＜100＞ single-crystal silicon,which is polished double-surfaces,diffused p⁺ on upper surface of the c-type silicon cup,and using of magnetron sputtering to manufacture n-ZnO thin films on diffusion field,which owned ＜0002＞ selected orientation,and then formed n-ZnO/p-Si heterojunction.Adopted HP4280A-type C-V test instrument to analyze C-V characteristics of the n-ZnO/p-Si heterojunction,which is step heterojunction,Adopted HP4145B type semiconductor parameter test instrument to analyze I-V characteristics of the n-ZnO/p-Si heterojunction,the results show that current increases with index function of additional biased voltage,when the n-ZnO/p-Si heterojunction is in the case of positive biased voltage,opposite current is unsaturated,adopted energy band structures of positive and opposite potential barriers of step heterojuntion to analyze I-V characteristics.