Abstract: The photoluminescence （PL） spectra at room temperature for the silicon-based samples doped by La、O⁺ by ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL spectra is closely relative to La and O⁺ implantation and to the temperature of thermal annealing. Besides, the feature and appearance of the Samples was surveyed with atomic force microscopy （AFM）. The photoluminescence mechanism for our samples is also discussed.