Pseudo-MOS方法表征SIMOX SOI材料总剂量辐照效应

Total-dose radiation effect for SIMOX SOI materials with the pseudo-MOS method

摘要: 为了缩短SOI材料的改性研究周期,利用pseudo-MOS方法研究了SIMOX SOI材料的总剂量辐照效应。试验采用硅注入绝缘埋层后退火得到改性的SIMOX SOI材料,通过对比改性前后样品在辐照前后的pseudo-MOSFET I_D-V_G特性曲线,分析改性工艺的影响。研究结果表明,合适的改性工艺能有效提高材料抗总剂量辐照效应的能力,pseudo-MOS方法在大大缩短SOI材料改性周期的基础上,能准确、快捷地对材料的总剂量辐照效应进行表征。

Abstract: To reduce the modification period,the pseudo-MOS technique was used to characterize the total dose radiation performance of Separation-by-implanted-oxygen（SIMOX） Silicon-on-insulator（SOI） materials.The wafers were modified by Si ion implantation with the post anneal.The pseudo-MOSFET I_D-V_G characteristics were tested before and after radiation.The result shows that a proper modification technology could improve the radiation hardness of the materials remarkably.It also suggests that the pseudo-MOS method could be efficiently used to study the total-dose radiation effect for SOI materials.