Abstract: Si-based light emission materials were fabricated by Si⁺, N⁺ coimplanting into SiO₂ films, Si⁺ and N⁺ ions were sequentially implanted with three energies and the distribution of both ions were overlapped in the implanted region. Short-wavelength peaks at ~340nm and ~427nm were measured in room temperature PL spectra of the annealed samples. Photoluminescence excitation (PLE) spectra were also studied and the light emission mechanisms are briefly discussed.