Ge/GaAs中APD及薄膜性能研究

Study of the property of Ge films and APD of Ge/GaAs

摘要: 研究了一种光纤通讯用光电探测器。在GaAs上蒸镀800nm的Ge，并在此材料基础上提出了一种吸收倍增分离的雪崩二极管（SAM-APD）的结构设计，采用GaAs作为倍增区，Ge作为吸收区。在此结构上初步制作的二极管正向开启电压为0.2～0.3V，反向击穿电压为2.5V，漏电不明显，p-n结特性良好。

Abstract: This work want to fabricate a photodiode used for optical-fiber-transmission system. 800nm Ge was deposited on n type GaAs and a SAM-APD was put forword in this material. GaAs was used as avalanche region, Ge was used as absorbent region.The diode was made on this material, Its positive volage is 0.2-0.3 V,opposive volage is 2.5 V. The leak current can't be observed, the property of p-n junction is well.