940nm高功率列阵半导体激光器

940nm high power array semiconductor lasers

摘要: 利用分子束外延生长方法生长出InGaAs/GaAs应变量子阱材料。利用该材料制作出的应变量子阱列阵半导体激光器准连续(500μs,100Hz)输出功率达到27W(室温),峰值波长为939～941nm,并分析了影响列阵半导体激光器输出功率的因素。

Abstract: The factors influenced on the ultimate output power of array laser were analyzed. The InGaAs/GaAs material with strained quantum well structure has been grown by MBE. Array semiconductor laser QCW output power achieves 27W (500μ s,100Hz). The peak wavelength is 939~941nm.