Abstract: The indium tin oxide (ITO) thin films were prepared on polymer at room temperature by DC reactive magnetron sputtering technique with 90%In-wt 10%Sn target in Ar+O₂ atmosphere. The effects of deposition rate, target-substrate distance, oxygen flux and thickness on the electrical and optical properties of as-deposited ITO thin films have been investigated. The minimum resistivity is 4.23×10^-4Ω·cm, and the transmittance in visible range is above 78%. The process windows have been found broadened significantly comparing with those reported in literatures.