退火温度对sol-gel制备的ZnO薄膜的结构影响

Influence of heat-treatment temperature on ZnO thin film prepared by sol-gel method

  • 摘要: 采用sol-gel旋涂法在抛光硅<111>晶面生长了高度C轴取向的ZnO薄膜。DSC以及XRD测试结果显示此溶胶系统的最佳退火温度为450℃左右,更高的退火温度将对薄膜的择优取向产生不利的影响。SEM显示薄膜表面致密、均匀、光滑,组成薄膜的颗粒尺寸在50~100nm,并显示出良好的C轴择优取向。

     

    Abstract: ZnO thin films with high c-axis orientation were prepared on polished Si <111> substrates by using spin coating method. DSC and XRD tests show that the optimal heat-treatment temperature for the sol-gel system to form ZnO film is about 450℃. The disadvantage influence on orientation can take place for higher temperature. Surface morphologies of the films were investigated by SEM, which show the high c-axis orientation of grains with average size of 50~100 nm.

     

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