2.5G DFB量子阱激光器p型欧姆接触电极的研究

P-type low resistance ohmic contact for 2.5G DFB quantum well lasers

摘要: 对2.5GDFB量子阱激光器p型低阻欧姆接触电极进行了研究，在退火温度400℃，退火时间30s进行快速热退火条件下，对Au-Pt-Ti□InAs□p⁺-InGaAs(掺Zn>1×10¹⁹cm^-3)□MQW□n-InP和Au-Pt-Ti□p⁺-InGaAs(掺Zn>1×10¹⁹cm^-3)□MQW□n-InP两种结构进行了p型欧姆接触试验研究，并对两者串联电阻进行了比较，其结果前者的串联电阻阻值为后者的1/4。

Abstract: In this paper, p type low resistant ohmic contact for 2.5Gb□s DFB quantum well lasers were investigated using band engineering". A comparison was made between the nonalloyed Au-Pt-Ti□InAs□p⁺-InGaAs□MQW□n-lnP and Au-Pt-Ti□p⁺-InGaAs□MQW□n-InP p-type ohmic contact. Both samples were annealed at 400℃ for 30 seconds in N₂ ambient by means of rapid thermal processing after metal deposition.The current voltage (I-V) characteristics measured by semiconductor parameter analyzer showed that the series resistance of the former sample is 1/4 of the second one.