Abstract: In the post-Moore Era, the dual bottlenecks of the "Memory Wall" and "Power Wall" constrain the performance enhancement of electronic systems. MRAM, with its non-volatility, high integration density, and compatibility with CMOS processes, has emerged as a key candidate device to overcome these performance limitations. Additionally, advanced packaging technologies, through high-density interconnections, provide a physical foundation for the efficient integration of MRAM with heterogeneous components. This paper first systematically reviews the classifications and features of advanced heterogeneous integration technologies, including RDL, microbump (μbump), HB, and TSV. Subsequently, it focuses on three typical application scenarios—CMOS Image Sensors (CIS), mobile System-on-Chips (SoCs), and computing architectures—and provides an in-depth analysis of MRAM design schemes based on heterogeneous integration. This study aims to offer theoretical and practical guidance for MRAM heterogeneous integration and to promote its industrial application in fields such as intelligent imaging and high-performance computing.