Abstract: InGaAs/GaAs/AlGaAs separated confinement heterostructure strained single quantum well materials was grown by the Metal Organic Chemical Vapor Deposition （MOCVD）. The wavelength of the semiconductor laser linear array made of these materials is 940.5nm, the CW output power is 37.7W （45A, 2.0V）, the slop efficiency is 0.99W/A （75%）, the electric-optical conversion is over 45%, and the threshold current density is 117A/cm². The semiconductor laser of such wavelength is an ideal pumping source for Yb: YAG solid stated lasers.